Dopant-Selective Deep Reactive Ion Etching of 4H-SiC Wafers
United States of America > 8000
Original Solicitation Links
80NSSC27946811Q
]dopant selective deep reactive ion etching of 4h-sic wafer
Contact
Description
NASA/NSSC is conducting a special notice and requesting capability statements for dopant-selective deep reactive ion etching of two 4-inch, approximately 350-micron-thick single-crystal 4H-SiC wafers. The wafers are already electroplated with patterned nickel etch masks. The work requires etching to a depth of 320 microns to create approximately 30-micron-thick diaphragms with radii ranging from 300 to 900 microns. The resulting diaphragms must meet specified quality requirements, including thickness uniformity within ±5% across each wafer, smooth sidewalls without scalloping, no unacceptable trenching or notching, fewer than five micro-mask artifacts per etched diaphragm surface where reasonably achievable, and an aspect ratio of at least 5. The etch recipe for semi-insulating and n-type SiC selectivity is to be determined by the foundry or customer. This notice is for capability statements only; submitted quotes will not be evaluated. The notice states an intent to pursue a sole-source contract with Biotronics Inc., subject to the Government's determination whether competition is warranted.
Classification Codes
Smart Codes
Specifications
Timeline
Documents
| Title | Date Posted |
|---|---|
| SATPC0043009 Tab 07 Capability Statement.pdf | Oct 13, 2026 12:00 PM |
| SATPC0043009 TAB 04 4 SOW.pdf | Oct 13, 2026 12:00 PM |
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