Chemical Beam Epitaxy Growth System
Canada > National Research Council of Canada
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Submission Instructions
Description
The National Research Council of Canada is seeking a complete, turnkey Chemical Beam Epitaxy (CBE) growth system to replace legacy epitaxial infrastructure and support high-precision growth of III-V compound semiconductors, including phosphide-, arsenide-, and antimonide-based materials. The system must include an ultra-high-vacuum growth chamber, automated wafer-transfer cluster, load-lock, degas and storage modules, hazardous-gas delivery and precursor management, chemical-beam injectors, process-control software, in-situ monitoring, safety interlocks, dry vacuum pumping, and molybdenum substrate holders. The requirement includes supply, delivery, installation, commissioning, formal acceptance testing, technical documentation, operator and process training for up to four NRC personnel, a one-year warranty, and ongoing technical support. Mandatory criteria require demonstrated experience with III-V CBE, MBE, or GSMBE systems, including recent installations and InP-based CBE systems, field-proven major assemblies, and long-term spare-parts and service support. Optional items include software support, a crane system, and spare growth-chamber pumps. The contract period runs from award through March 31, 2029, with delivery required by January 7, 2028; the evaluation combines technical merit, price, and Canadian value-added.
Classification Codes
Smart Codes
Specifications
Timeline
Requirements
- Within the last 3 years
Documents
| Title | Date Posted |
|---|---|
| 26-58143_RFP_Chemical Beam Epitaxy_ENG.pdf | Oct 14, 2026 12:00 PM |
| 26-58143_RFP_Chemical Beam Epitaxy_FRE.pdf | Oct 14, 2026 12:00 PM |
| Integrity verification form ENG.pdf | Oct 14, 2026 12:00 PM |
| formulaire_liste_des_noms_pour_declaration_integrite-fra.pdf | Oct 14, 2026 12:00 PM |
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